ty semiconductor reliability handbook (?handling SSM3J305T ? 4 v drive ? low on-resistance: r on = 477 m ? (max) (@v gs = ? 4 v) r on = 237 m ? (max) (@v gs = ? 10 v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain?source voltage v ds ? 30 v gate?source voltage v gss 20 v dc i d ? 1.7 drain current pulse i dp ? 3.4 a drain power dissipation p d (note 1) 700 mw channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v (br) dss i d = ? 1 ma, v gs = 0 ? 30 ? ? drain?source breakdown voltage v (br) dsx i d = ? 1 ma, v gs = + 20 v ? 15 ? ? v drain cutoff current i dss v ds = ? 30 v, v gs = 0 ? ? ? 1 a gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = ? 5 v, i d = ? 1 ma ? 1.2 ? ? 2.6 v forward transfer admittance ? y fs ? v ds = ? 5 v, i d =? 0.65 a (note 2) 0.8 1.5 ? s i d = ? 0.65 a, v gs = ? 10 v (note 2) ? 177 237 drain?source on-resistance r ds (on) i d = ? 0.4 a, v gs = ? 4 v (note 2) ? 357 477 m input capacitance c iss ? 137 ? output capacitance c oss ? 39 ? reverse transfer capacitance c rss v ds = ? 15 v, v gs = 0, f = 1 mhz ? 20 ? pf total gate charge q g ? 1.3 ? gate ? source charge q gs ? 0.7 ? gate ? drain charge q gd v ds = ? 15 v, i ds = ? 1.7 a v gs = ? 4 v ? 0.6 ? nc turn-on time t on ? 15 ? switching time turn-off time t off v dd = ? 15 v, i d = ? 0.65 a, v gs = 0 to ? 4 v, r g = 10 ? ? 14 ? ns drain?source forward voltage v dsf i d = 1.7 a, v gs = 0 v (note 3) ? 0.85 1.2 v note 2: pulse test unit: mm weight: 10 mg (typ.) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
switching time test circuit marking equivalent circuit (top view) precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = ? 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. v dd = ? 15 v r g = 10 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 4 v 10 s v dd out r g r l (c) v out t on 90% 10% ? 4 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit jj a 1 2 3 1 2 3 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM3J305T smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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